d a t a sh eet product speci?cation supersedes data of 2003 dec 03 2004 aug 10 discrete semiconductors PBSS8110AS 100 v, 1 a npn low v cesat (biss) transistor b ook, halfpage m3d186
2004 aug 10 2 philips semiconductors product speci?cation 100 v, 1 a npn low v cesat (biss) transistor PBSS8110AS features sot54 package low collector-emitter saturation voltage v cesat high collector current capability: i c and i cm higher efficiency leading to less heat generation. applications automotive 42 v power telecom infrastructure general industrial applications power management C dc/dc converters C supply line switching C battery charger C lcd backlighting. peripheral drivers C generic driver (e.g. lamps and leds) C inductive load driver (e.g. relays, buzzers and motors). description npn low v cesat biss transistor in a sot54 plastic package. quick reference data marking pinning symbol parameter max. unit v ceo collector-emitter voltage 100 v i c collector current (dc) 1 a i cm peak collector current 3 a r cesat equivalent on-resistance 200 m w type number marking code PBSS8110AS s8110as pin description 1 collector 2 base 3 emitter fig.1 simplified outline (sot54) and symbol. handbook, halfpage 1 3 2 mam279 1 2 3 ordering information type number package name description version PBSS8110AS - plastic single-ended leaded (through hole) package; 3 leads sot54
2004 aug 10 3 philips semiconductors product speci?cation 100 v, 1 a npn low v cesat (biss) transistor PBSS8110AS limiting values in accordance with the absolute maximum rating system (iec 60134). note 1. device mounted on a fr4 printed-circuit board; single-sided copper; tinplated; standard footprint. thermal characteristics note 1. device mounted on a fr4 printed-circuit board; single-sided copper; tinplated; standard footprint. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 120 v v ceo collector-emitter voltage open base - 100 v v ebo emitter-base voltage open collector - 5v i c collector current (dc) - 1a i cm peak collector current t j max - 3a i b base current (dc) - 300 ma p tot total power dissipation t amb 25 c; note 1 - 830 mw t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c symbol parameter conditions value unit r th(j-a) thermal resistance from junction to ambient in free air; note 1 150 k/w
2004 aug 10 4 philips semiconductors product speci?cation 100 v, 1 a npn low v cesat (biss) transistor PBSS8110AS characteristics t j =25 c unless otherwise speci?ed. note 1. pulse test: t p 300 m s; d 0.02. symbol parameter conditions min. typ. max. unit i cbo collector cut-off current v cb = 80 v; i e =0 -- 100 na v cb = 80 v; i e = 0; t j = 150 c -- 50 m a i ces collector cut-off current v ce = 80 v; v be =0 -- 100 na i ebo emitter cut-off current v eb =4v; i c =0 -- 100 na h fe dc current gain v ce = 10 v; i c =1ma 150 -- v ce = 10 v; i c = 250 ma 150 - 500 v ce = 10 v; i c = 0.5 a; note 1 100 -- v ce = 10 v; i c = 1 a; note 1 80 -- v cesat collector-emitter saturation voltage i c = 100 ma; i b =10ma -- 40 mv i c = 500 ma; i b =50ma -- 120 mv i c = 1 a; i b = 100 ma -- 200 mv r cesat equivalent on-resistance i c = 1 a; i b = 100 ma; note 1 - 165 200 m w v besat base-emitter saturation voltage i c = 1 a; i b = 100 ma; note 1 -- 1.05 v v beon base-emitter turn-on voltage v ce = 10 v; i c =1a -- 0.9 v f t transition frequency v ce = 10 v; i c = 50 ma; f = 100 mhz 100 -- mhz c c collector capacitance v cb = 10 v; i e =i e = 0; f = 1 mhz -- 7.5 pf
2004 aug 10 5 philips semiconductors product speci?cation 100 v, 1 a npn low v cesat (biss) transistor PBSS8110AS package outline unit a references outline version european projection issue date iec jedec jeita mm 5.2 5.0 b 0.48 0.40 c 0.45 0.38 d 4.8 4.4 d 1.7 1.4 e 4.2 3.6 l 14.5 12.7 e 2.54 e 1 1.27 l 1 (1) max. 2.5 b 1 0.66 0.55 dimensions (mm are the original dimensions) note 1. terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. sot54 to-92 sc-43a 97-02-28 04-06-28 a l 0 2.5 5 mm scale b c d b 1 l 1 d e plastic single-ended leaded (through hole) package; 3 leads sot54 e 1 e 1 2 3
2004 aug 10 6 philips semiconductors product speci?cation 100 v, 1 a npn low v cesat (biss) transistor PBSS8110AS data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
? koninklijke philips electronics n.v. 2004 sca76 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands r75/03/pp 7 date of release: 2004 aug 10 document order number: 9397 750 13641
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